Method and apparatus of patterning semiconductor device

ABSTRACT

Provided is an apparatus for fabricating a semiconductor device. The apparatus includes a first photomask and a second photomask. The first photomask has a plurality of first features thereon, and the first photomask having a first global pattern density. The second photomask has a plurality of second features thereon, and the second photomask has a second global pattern density. The plurality of first and second features collectively define a layout image of a layer of the semiconductor device. The first and second global pattern densities have a predetermined ratio.

PRIORITY DATA

This application claims priority to application Ser. No. 12/750,873,filed on Mar. 31, 2010, entitled “METHOD AND APPARATUS OF PATTERNINGSEMICONDUCTOR DEVICE,” the disclosure of which is incorporated herein byreference in its entirety.

TECHNICAL FIELD

The present disclosure relates generally to a semiconductor device, andmore particularly, to a method of patterning the semiconductor device.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs where each generation has smaller and more complexcircuits than the previous generation. However, these advances haveincreased the complexity of processing and manufacturing ICs and, forthese advances to be realized, similar developments in IC processing andmanufacturing are needed. In the course of integrated circuit evolution,functional density (i.e., the number of interconnected devices per chiparea) has generally increased while geometry size (i.e., the smallestcomponent (or line) that can be created using a fabrication process) hasdecreased.

As the geometry sizes shrink, it may be difficult for conventionalphotolithography processes to form semiconductor features having thesesmall geometry sizes. A double patterning method may be used to form thesemiconductor features having small geometry sizes. However, existingdouble patterning methods suffer from load balancing issues, which maylead to inconsistent geometry sizes and may cause problems in lateretching or polishing processes.

Therefore, while existing methods of patterning semiconductor deviceshave been generally adequate for their intended purposes, they have notbeen entirely satisfactory in every aspect.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flowchart illustrating a method for patterning asemiconductor device according to various aspects of the presentdisclosure;

FIG. 2 illustrate a fragmentary top view of a layer of a physical layoutplan of the semiconductor device;

FIGS. 3A and 3B illustrate fragmentary top views of two photomasksfabricated in accordance with one embodiment of the method of FIG. 1;

FIGS. 4A and 4B illustrate fragmentary top views of two photomasksfabricated in accordance with other embodiments of the method of FIG. 1;and

FIG. 5 is a simplified diagrammatic view of a machine that can be usedto generate patterns for the photomasks of FIGS. 3 and 4.

SUMMARY

One of the broader forms of the present disclosure involves a method offabricating a semiconductor device. The method includes: providing anintegrated circuit layout plan, the integrated circuit layout planhaving a plurality of features; sorting the plurality of features into aplurality of first features and a plurality of second features, each ofthe first features being separated from adjacent first features atrespective distances that are less than approximately X, and each of thesecond features being separated from adjacent second features atrespective distances that are greater than approximately X; assigningeach of the first features into one of a first subset and a secondsubset of the first features; assigning each of the second features intoone of a first subset and a second subset of the second features;forming a first mask pattern with the first subset of the first featuresand the first subset of the second features, the first mask patternhaving a first global pattern density; forming a second mask patternwith the second subset of the first features and the second subset ofthe second features, the second mask pattern having a second globalpattern density; and fabricating first and second photomaskscorresponding to the first and second mask patterns, respectively;wherein the assigning each of the first features is carried out in amanner so that a group of the first features in the first subsetinterleave with a group of the first features in the second subset, andthe assigning each of the first features and the assigning each of thesecond features are carried out in a manner so that the first and secondglobal pattern densities approach a predetermined ratio.

Another of the broader forms of the present disclosure involves a methodof fabricating a semiconductor device. The method includes: providing alayout design for the semiconductor device, the layout design containinga plurality of features; categorizing the plurality of features into aplurality of first features and a plurality of second features, each ofthe first features being spaced apart from adjacent first features atrespective distances that are less than a predetermined distance, andeach of the second features being spaced apart from adjacent secondfeatures at respective distances that are greater than the predetermineddistance; sorting the first features into first and second subsets offeatures in a manner so that each of the features in the first andsecond subsets is spaced apart from adjacent features in the respectivesubset at respective distances that are greater than the predetermineddistance; sorting the second features into third and fourth subsets offeatures in a manner so that a number of features in the third subset isfree of substantial deviation from a number of features in the fourthsubset; forming a first mask pattern with the first and third subsets offeatures; forming a second mask pattern with the second and fourthsubsets of features; and fabricating first and second photomasks withthe first and second mask patterns, respectively; wherein thepredetermined distance is a function of: a critical dimension of asemiconductor fabrication process; a wavelength of a radiation wave usedin a photolithography process of the semiconductor fabrication process;a numerical aperture of a lens used in the photolithography process; anda process compensation factor.

Yet another of the broader forms of the present disclosure involves anapparatus for fabricating a semiconductor device. The apparatusincludes: a first photomask having a plurality of first featuresthereon, the first photomask having a first global pattern density; anda second photomask having a plurality of second features thereon, thesecond photomask having a second global pattern density; wherein theplurality of first and second features collectively define a layoutimage of a layer of the semiconductor device, and wherein the first andsecond global pattern densities have a predetermined ratio.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the invention. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Moreover,the formation of a first feature over or on a second feature in thedescription that follows may include embodiments in which the first andsecond features are formed in direct contact, and may also includeembodiments in which additional features may be formed interposing thefirst and second features, such that the first and second features maynot be in direct contact. Various features may be arbitrarily drawn indifferent scales for the sake of simplicity and clarity.

Illustrated in FIG. 1 is a flowchart of a method 11 of patterning asemiconductor device according to various aspects of the presentdisclosure. The method 11 begins with block 13 in which an integratedcircuit layout plan is provided. The integrated circuit layout plan hasa plurality of features. The method 11 continues with block 13 in whichthe plurality of features are sorted into a plurality of first featuresand a plurality of second features. Each of the first features areseparated from adjacent first features at respective distances that areless than approximately X, and each of the second features are separatedfrom adjacent features at respective distances that are greater thanapproximately X. The method 11 continues with block 17 in which each ofthe first features are assigned into one of a first subset and a secondsubset of the first features. The method 11 continues with block 19 inwhich each of the second features are assigned into one of a firstsubset and a second subset of the second features. The method 11continues with block 21 in which a first mask pattern is formed with thefirst subset of the first features and the first subset of the secondfeatures. The first mask pattern has a first global pattern density. Themethod 11 continues with block 23 in which a second mask pattern isformed with the second subset of the first features and the secondsubset of the second features. The second mask pattern has a secondglobal pattern density. The method 11 continues with block 25 in whichfirst and second photomasks are fabricated. The first and secondphotomasks correspond to the first and second mask patterns,respectively. In accordance with the method 11, block 17 is carried outin a manner so that a group of the first features in the first subsetinterleave with a group of the first features in the second subset, andblock 17 and 19 are carried out in a manner so that the first and secondglobal pattern densities approach a predetermined ratio.

After a semiconductor device such as an integrated circuit has beendesigned, layout engineers generate a physical layout plan (or layoutdesign) of the integrated circuit. The physical layout plan may containa plurality of different layout layers that each contain a plurality ofsemiconductor features. For purposes of illustration, a fragmentary topview of an exemplary layout layer 40 of such physical layout plan of anintegrated circuit is shown in FIG. 2. The layout layer 40 includes aplurality of local regions, for example, local regions 50-58. Tofacilitate the ensuing discussions, the top view of the local region 57is shown in more detail. The local region 57 has semiconductor features70-81. Distances 100-110 separate features 70-71, 71-72, 72-73, 73-74,74-75, 75-76, 76-77, 77-78, 78-79, 79-80, and 80-81, respectively, asillustrated in FIG. 2. In the embodiment shown, the features 70-73 areapproximately evenly spaced apart, meaning the distances 100-102 areapproximately equal to one another. The features 73-77 are evenly spacedapart, meaning the distances 103-106 are approximately equal to oneanother. The features 77-81 are evenly spaced apart, meaning thedistances 107-110 are approximately equal to one another. In otherembodiments, the features 73-77, 77-81, and 107-110 may not be evenlyspaced apart.

The distances 100-102 are smaller than a predetermined distance X. Xrepresents the finest or smallest resolution (smallest spacing) that canbe achieved by a photolithography process in a given semiconductorfabrication technology generation. In other words, X is the smallestdistance between adjacent semiconductor features that can be formed bythe photolithography process without shorting these adjacentsemiconductor features together. X varies depending on a variety offactors, including a critical dimension (CD) of a semiconductorfabrication process, a wavelength (λ) of a radiation wave (such aslight) used in the photolithography process, a numerical aperture (NA)of a lens used in the photolithography process, and a processcompensation factor (K). The critical dimension CD is the smallestfeature size that can be formed by the photolithography process of thesemiconductor fabrication process. The process compensation factor K hasa numerical value and is a function of fabrication process parameterssuch as fabrication cost, acceptable deviation, semiconductorfabrication tool limitations, etc. The process compensation factor K canbe tuned or changed. For example, K can be reset if a newphotolithography tool such as a scanner is used, or if a new type ofphotoresist is applied, or that a new etching technology is employed. Asan example, K may be in a range that varies from approximately 0.2 toapproximately 0.5. Once the values of k, K, NA, and CD are determined,the following equation may be used to calculate X:X=(2*λ*K/NA)−CDIn an embodiment, the value of X in a 22-nanometer (nm) fabricationtechnology generation may be in a range that varies from about 50 nm toabout 80 nm.

The distances 103-106 are greater than the predetermined distance X, butare smaller than a predetermined distance Y, where Y is in a range thatvaries from approximately 5 times the CD of the semiconductorfabrication process to approximately 10 times the CD. In an embodiment,Y is in a range that varies from approximately 150 nm to approximately300 nm. The distances 107-110 are greater than the predetermineddistance Y.

It is understood that the number of local regions 50-58 of the layoutlayer 40 and the number of semiconductor features 70-81 as well as theirrespective sizes and shapes are merely exemplary. The layer 40 in otherembodiments may have a different number of local regions, and each localregion may have a different number of semiconductor features withdifferent sizes and shapes.

Since the distances 100-102 between the respective features 70-71,71-72, and 72-73 are smaller than the smallest resolution X of thesemiconductor fabrication process, a patterning method known as doublepatterning may be used to form the features 70-73. Double patterninginvolves two stages of patterning so as to expand the effective spacingbetween adjacent features. As an example, in the embodiment shown inFIG. 2, the features 70 and 72 would be formed on one photomask (notillustrated), and the features 71 and 73 would be formed on a differentphotomask (not illustrated). A semiconductor wafer (not illustrated) isthen patterned using the photomask having the features 70 and 72, so asto form semiconductor components that resemble the image patterns of thefeatures 70 and 72. In other words, the image patterns of the features70 and 72 are transferred onto the semiconductor wafer. The effectivespacing or distance between the features 70 and 72 is approximatelyequal to a sum of the distance 100, the distance 101, and the size ofthe feature 71 measured along the same direction that the distances100-102 are measured. Thus, the effective distance between the features70 and 72 may be greater than X and can thus be achieved by thesemiconductor fabrication technology.

Subsequently, the semiconductor wafer is patterned using the photomaskhaving the features 71 and 73, so as to form semiconductor componentsthat resemble the image patterns of the features 71 and 73. In otherwords, the image patterns of the features 71 and 73 are transferred ontothe semiconductor wafer after the image patterns of the features 70 and72 have already been transferred. For reasons similar to those discussedabove, the features 71 and 73 have a greater effective distance betweenthem and may therefore be capable of being formed by the semiconductorfabrication technology.

It is understood that the order in which the photomasks are used is notimportant. In an alternative embodiment, the photomask having thefeatures 71 and 73 may be used to pattern the semiconductor wafer beforethe photomask having the features 70 and 72 is used. In any case, afterthe two stages of photolithography (each involving the use of adifferent photomask) are completed, the image patterns of the features70-73 may be transferred onto a single layer of the semiconductor wafer.

However, one drawback of existing double patterning methods is that theydo not take the loading effect of the rest of the features 74-81 intoconsideration when designing the above-mentioned photomasks. Thefeatures 74-81 have adequate spacing between them, therefore doublepatterning is not necessary to form these features. As a result,although the features 70-73 are distributed or split between twophotomasks, the features 74-81 are often times formed on a singlephotomask for purposes of convenience and simplicity. When this is done,a global pattern density—the total area of the features on a photomaskdivided by the total area of the photomask—of one of the photomasks ismuch greater than the global pattern density of the other photomask.Furthermore, local area densities—the total areas of the features indifferent local areas of the photomask (such as local regions 50-58)divided by the total area of each of the local areas—do not match oneanother. In addition, the local pattern densities of the correspondinglocal areas between the two photomasks do no match one another either.As a result, the semiconductor components formed on the wafer may haveuneven sizes and/or depths, which may adversely affect later etching andpolishing processes and is therefore undesirable. To solve this loadbalancing problem, the present disclosure uses an algorithm to assignsemiconductor features to different photomasks. Four embodiments of thealgorithm are respectively discussed below in detail. Each of thealgorithms may be implemented as computer programs, sometimes alsoreferred to as “recipes”. For the sake of illustration, the features70-81 of the local region 57 are used as exemplary semiconductorfeatures in the ensuing discussions.

The first embodiment of the algorithm may be referred to as a “randomassignment embodiment”. In the random assignment embodiment, thealgorithm first sorts each of the features 70-81 into one of twocategories, depending on each feature's spacing or distance fromadjacent features. In particular, if a feature's spacing or distancefrom adjacent features is less than X (the smallest resolution of agiven semiconductor fabrication process), that feature is sorted intocategory A. The remaining features are sorted into category B. In otherwords, features that are disposed close enough to adjacent features soas to require double patterning are sorted into category A, and thefeatures that do not need double patterning are sorted into category B.Here, the features 70-73 are sorted into category A, and the features74-81 are sorted into category B. It may be said that this sortingprocess is performed based on the criteria or concern of lithographyresolution.

Next, the algorithm assigns the features 70-73 in category A into twodifferent subsets A and B in a periodic fashion. As an example, thefeatures 70 and 72 are assigned into subset A, and the features 71 and73 are assigned into subset B. Alternatively, the features 71 and 73 maybe assigned into subset A, and the features 70 and 72 may be assignedinto subset B. Another way of looking at this periodic assignment isthat the features 70 and 72 in subset A are periodically interleavedwith the features 71 and 73 in subset B. The process of assigning thefeatures 70-73 into different subsets A and B may also be referred to asa part of a coloring process—each of the features 70-73 is given aconceptual “color” depending on its assignment into the subset A or thesubset B. The features 70 and 72 in subset A have a different “color”than the features 71 and 73 in subset B. This coloring process is alsoperformed for the other features 74-81, as discussed below.

Either following the assignment of the features 70-73 in category A, orbeing performed concurrently, the features 74-81 are randomly assignedinto two different subsets C and D. As an example, the features 74, 77,79, and 80 are assigned into subset C, and the features 75, 76, 78, and81 are assigned into subset D. As another example, the features 75, 77,78 and 80 are assigned into subset C, and the features 74, 76, 79 and 81are assigned into subset D. In other words, since the assignment of thefeatures 74-81 are performed in a random fashion, there are numerousother configurations of assignment. These other configurations are notdiscussed herein for the sake of simplicity and brevity. The process ofassigning the features 74-81 into different subsets C and D is a part ofthe coloring process. Here, the “coloring” of features 74-81 into thesubsets C or D is performed based on the criteria or concern of loadingbalance between the photomasks that will contain these features.Further, in the process of assignment discussed above, each of thefeatures 70-81 may be assigned as a whole, or may alternatively be splitup into two or more sub-features and then assigned.

Referring now to FIGS. 3A and 3B, fragmentary top views of photomasks130A and 131A are illustrated, respectively. In accordance with thealgorithm, the features 70 and 72 in subset A and the features 74, 77,79, and 80 in subset C collectively form a mask pattern 134A, and thefeatures 71 and 73 in subset B and the features 75, 76, 78, and 81 insubset D collectively form a mask pattern 135A. The photomask 130A isfabricated using the mask pattern 134A, where the mask pattern 134A isdisposed in a local area 140A on the photomask 130A. The photomask 131Ais fabricated using the mask pattern 135A, where the mask pattern 135Ais disposed in a local area 141A on the photomask 131A. The local areas140A and 141A each correspond to the local area 57 (FIG. 2) of the layer40 and would have been aligned with each other when the photomasks 130Aand 131A are used to pattern a semiconductor wafer (not illustrated) ina later lithography process. It is also understood that the photomasks130A and 131A each contain a plurality of other local areas (e.g. localareas that would correspond with the local areas 50-56 and 58 of FIG.2). These local areas are not shown for the sake of simplicity, but itis understood that each local area may contain a plurality of featuresthat have been assigned or split in accordance with the algorithm asdiscussed above.

As is illustrated in FIGS. 3A and 3B, the spacing between the features70-81 on each of the photomasks 130A and 131A is greater as compared tothe spacing between the features in the local area 57 as illustrated inFIG. 2. Consequently, the features, particularly the features 70-73 areeasier to form even with the resolution limitations of thephotolithography process. Further, the algorithm can be designed andcarried out in a manner so as to:

1. optimize the matching between the global pattern densities of thephotomasks 130A and 131A;

2. optimize the matching between the local pattern densities of thelocal area 140A on the photomask 130A and the local area 141A on thephotomask 131A;

3. optimize the matching between local pattern densities of the localarea 140A and the local pattern densities of other local areas on thephotomask 130A; and

4. optimize the matching between local pattern densities of the localarea 141A and the local pattern densities of other local areas on thephotomask 131A.

Alternatively stated, in each of the global/local pattern densitymatching scenarios discussed above, the two pattern densities that needto be optimally matched are functions of each other, or correlated witheach other. As an example, the global pattern density of the photomask130A and the global pattern density of the photomask 131A have a ratiothat is tuned to be approaching 1:1, where the ratio is tuned throughthe design and implementation of the algorithm. In other words, adifference between the global pattern density of the photomask 130A andthe global pattern density of the photomask 131A is less a predeterminedvalue, and the predetermined value is approximately 0 when the ratiobetween the two global pattern densities is approximately 1:1. Even incases where it is difficult for the ratio to be tuned to beapproximately 1:1, the ratio can still be tuned so that it does notsubstantially deviate from 1:1, meaning that the global pattern densityof the photomask 130A is free of substantial deviation from the globalpattern density of the photomask 131A and vice versa. To ensure thatthese global pattern densities do not substantially deviate from eachother, the ratio discussed above is tuned to be within a predeterminedpercentage from a ratio of 1:1, where the predetermined percentage isspecified by design and manufacturing requirements to achieve properload balancing. In an embodiment, to maximize global pattern densitymatching, the number of features assigned to the photomask 130A does notsubstantially deviate from the number of features assigned to thephotomask 131A. 2Similarly, in some cases, the ratio of the variouslocal pattern densities discussed above may be tuned to approachapproximately 1:1 as well. In other cases, due to the layout plan of thefeatures in the layer 40 (FIG. 2) of the integrated circuit, a ratio of1:1 between local pattern densities may not be achievable, but thealgorithm can still be used to minimize the difference between the localpattern densities, so that these local pattern densities are free ofsubstantial deviations from one another in a manner similar to that ofthe global pattern densities.

Referring back to FIG. 2, another embodiment of the algorithm isdiscussed. This embodiment may be referred to as a “multi-stagedecomposition” embodiment. In this embodiment, the algorithm includestwo stages of processing, each having a different programming “recipe”.In the first stage, using a first recipe, the algorithm sorts thefeatures 70-81 into categories A and B in a similar fashion as therandom assignment embodiment of the algorithm discussed above. Thus, thefeatures 70-73 are sorted into category A, and the features 74-81 aresorted into category B. Then the features 70-73 are assigned intosubsets A and B in a similar fashion as the random assignment embodimentof the algorithm. Thus, the features 70 and 72 are assigned into subsetA, and the features 71 and 73 are assigned into subset B.

The algorithm then proceeds to the second stage. In the second stage,using a second recipe, the algorithm splits the remaining features 74-81into two groups. In one group, each of the features is spaced apart fromadjacent features at a distance that is less than the predetermineddistance Y (recall that Y is in a range that varies from approximately 5times the CD to approximately 10 times the CD). In another group, eachof the features is spaced apart from adjacent features at a distancethat is greater than Y. Thus, the features 74-77 are split into onegroup, and the features 78-81 are split into another group. Thereafter,the features 74-77 are periodically assigned into subsets C and D. As anexample, the features 74 and 76 are assigned into subset C, and thefeatures 75 and 77 are assigned into subset D. In other words, thefeatures 74 and 76 in the subset C are periodically interleaved with thefeatures 75 and 77 in the subset D. The features 78 and 81 are randomlyassigned into subsets E and F. As an example, the features 78 and 81 areassigned into the subset E, and the features 79 and 80 are assigned intothe subset F. Alternatively, the features 78 and 79 are assigned intothe subset E, and the features 80 and 81 are assigned into the subset F.

Referring now to FIGS. 4A and 4B, fragmentary top views of photomasks130B and 131B are illustrated, respectively. In accordance with themulti-stage decomposition algorithm, a mask pattern 134B is formedcollectively by the features 70 and 72 in subset A, the features 74 and76 in subset C, and the features 78 and 81 in subset E, and a maskpattern 135B is formed collectively by the features 71 and 73 in subsetB, the features 75 and 77 in subset D, and the features 79 and 80 insubset F. The photomask 130B is fabricated using the mask pattern 134B,where the mask pattern 134B is disposed in a local area 140B on thephotomask 130B. The photomask 131B is fabricated using the mask pattern135B, where the mask pattern 135B is disposed in a local area 141B onthe photomask 131B. The local areas 140B and 141B each correspond to thelocal area 57 (FIG. 2) of the layer 40 and would have been aligned witheach other when the photomasks 130B and 131B are used to pattern asemiconductor wafer (not illustrated) in a later lithography process. Itis also understood that the photomasks 130B-131B each contain aplurality of other local areas (e.g. local areas that would correspondwith the local areas 50-56 and 58 of FIG. 2). These local areas are notshown for the sake of simplicity, but it is understood that each localarea may contain a plurality of features that have been assigned orsplit in accordance with the algorithm as discussed above.

The multi-stage decomposition embodiment of the algorithm offers most ofthe advantages discussed above in association with the random assignmentembodiment of the algorithm, though it is understood that differentembodiments of the algorithm may offer different advantages, and that noadvantage is required for all embodiments. In addition, the periodicassignment of the features 75-78 (which have spacing less than thepredetermined distance Y) results in photomasks 130B and 131B that havemore matched and balanced global pattern densities and therefore leadsto better performance for the later fabrication processes. However,since the algorithm in this multi-stage decomposition embodiment iscarried out in two stages, the actual run time may be longer than therun time of the random assignment embodiment of the algorithm.

Referring back to FIG. 2, yet another embodiment of the algorithm isdiscussed. This embodiment may be referred to as a “multi-criteriondecomposition” embodiment. This embodiment of the algorithm is similarto the multi-stage decomposition embodiment discussed above, except thatthe algorithm is carried out in one single stage using a singleprogramming recipe, as opposed to the two stages using two differentprogramming recipes in the multi-stage decomposition embodiment. Thecriteria used to determine the sorting and assigning of the features70-81 in this embodiment are substantially similar to the criteria inthe multi-stage decomposition embodiment. For purposes of consistencyand simplicity, the multi-criterion decomposition algorithm is carriedout in a manner so that the resulting photomasks 130B and 131B have thesame respective mask patterns 134B and 135B as the multi-stagedecomposition embodiment, which are illustrated in FIGS. 4A and 4B. Themulti-criterion decomposition embodiment achieves most of the advantagesof the multi-stage decomposition embodiment discussed above, and offersan additional advantage of reduced run time, since it is carried out ina single stage using a single programming recipe. However, theprogramming recipe in this embodiment requires more complex programminginstructions or programming routines, and thus may lead to longerinitial development time and costs. In other words, a trade off existsbetween run time and initial development time and costs in selecting themulti-stage decomposition embodiment or the multi-criteriondecomposition embodiment of the algorithm.

Referring back to FIG. 2, one more embodiment of the algorithm isdiscussed. This embodiment may be referred to as a “mixing typedecomposition” embodiment. This embodiment of the algorithm is similarto the multi-stage decomposition embodiment and the multi-criteriondecomposition embodiment discussed above. Unlike the multi-stagedecomposition embodiment, however, the algorithm in the mixing typedecomposition embodiment is carried out in one stage. Further, unlikethe other embodiments, the algorithm here is carried out using twocomputerized virtual layers (also referred to as internal layers) so asto reduce programming complexities and initial development time andcosts. More specifically, the layout plan of the layout layer 40 iscontained in a computer file known as a GDS type file. The featurescontained by the GDS file, such as features 70-81, are divided using thealgorithm and are put on two different computerized virtual layers A andB. These computerized virtual layers A and B are separate andindependent from each other. In accordance with this mixing typeembodiment, the features that have spacing or distance less than X areput on one computerized virtual layer, for example computerized virtuallayer A, and the other features are put on the other computerizedvirtual layer B. Here, the features 70-73 are put in the computerizedvirtual layer A, while the features 74-81 are put in the computerizedvirtual layer B. In comparison, the “random assignment” embodiment, the“multi-stage decomposition embodiment”, and the “multi-criteriondecomposition” embodiment each utilize only one computerized virtuallayer (or one internal layer), in the features are divided and assigned.

In the “mixing type decomposition” embodiment, the features 70-73 in thecomputerized virtual layer A are further assigned into the subsets A andB in a manner similar to the multi-stage and multi-criteriondecomposition embodiments discussed above, and the features 74-81 in thecomputerized virtual layer B are further assigned into the subsets C, D,E, and F in a manner similar to the multi-stage and multi-criteriondecomposition embodiments discussed above.

Referring to FIGS. 4A and 4B, before the photomasks 130B and 131B arefabricated, the subset A in the computerized virtual layer A is combinedor merged with the subsets C and E in the computerized virtual layer Bto form the mask pattern 134B, and the subset B in the computerizedvirtual layer A is combined or merged with the subsets D and F in thecomputerized virtual layer B to form the mask pattern 135B. In otherwords, the mask pattern 134B is formed collectively by the subsets A, C,and E, and another mask pattern 135B is formed collectively by thesubsets B, D, and F. Thereafter, the photomask 130B is fabricated usingthe mask pattern 134B, and the photomask 131B is fabricated using themask pattern 135B. Since the mixing type decomposition embodiment of thealgorithm is carried out using a single stage, it does not prolongactual run time. Also, since the features 70-81 are segregated into twoseparate and independent computerized virtual layers, the programmingcomplexities are reduced, which decreases initial development time andcosts.

FIG. 5 is a simplified diagrammatic view of a mask pattern generator200. The mask pattern generator 200 is a machine that can be used togenerate mask patterns for photomasks, for example the mask patterns 134and 135 of FIGS. 3 and 4, so that the photomasks 130 and 131 may beformed having those patterns. The mask pattern generator 200 includes amemory storage component 210 and a processor component 220. The memorystorage component 210 stores instructions that can be executed by theprocessor 220. The instructions contain algorithms used to produce themask patterns 134 and 135 as discussed above with reference to FIGS.2-4. The processor 220 runs those instructions and generates the maskpatterns 134 and 135. The generated mask patterns 134 and 135 may bestored in the memory storage 210. These generated mask patterns 134 and135 may be retrieved later to fabricate the photomask 130 and 131 ofFIGS. 3 and 4.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the detailed description thatfollows. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of fabricating a semiconductor device,comprising: providing a layout design for the semiconductor device, thelayout design containing a plurality of features; categorizing theplurality of features into a plurality of first features and a pluralityof second features, each of the first features being spaced apart fromadjacent first features at respective distances that are less than apredetermined distance, and each of the second features being spacedapart from adjacent second features at respective distances that aregreater than the predetermined distance; sorting the first features intofirst and second subsets of features in a manner so that each of thefeatures in the first and second subsets is spaced apart from adjacentfeatures in the respective subset at respective distances that aregreater than the predetermined distance; sorting the second featuresinto third and fourth subsets of features in a manner so that a numberof features in the third subset is free of substantial deviation from anumber of features in the fourth subset; forming a first mask patternwith the first and third subsets of features; and forming a second maskpattern with the second and fourth subsets of features; wherein thepredetermined distance is a function of one or more parameters selectedfrom the group consisting of: a critical dimension of a semiconductorfabrication process; a wavelength of a radiation wave used in aphotolithography process of the semiconductor fabrication process; anumerical aperture of a lens used in the photolithography process; and aprocess compensation factor.
 2. The method of claim 1, wherein thesorting the first features is carried out in a manner so that thefeatures in the first and second subsets alternate periodically, andwherein the sorting the second features is carried out in a manner sothat a group of the features in the third and fourth subsets alternateperiodically, and a different group of the features in the third andfourth subsets alternate randomly.
 3. The method of claim 1, furtherincluding fabricating first and second photomasks with the first andsecond mask patterns, respectively, and wherein the first and secondphotomasks each have a respective global pattern density, and whereinthe global pattern density of the first photomask is free of substantialdeviation from the global pattern density of the second photomask. 4.The method of claim 3, wherein at least one of the first and secondphotomasks has a plurality of local pattern densities that are free ofsubstantial deviation from one another.